000			00809cam a2200277 4500
001			4559774
003			I11T
005			20161101123657.0
008			730615s1973 nyua b 001 0 eng
010			_a 73009892
020			_a0471720305
040			_aDLC _cDLC _dDLC
050	0	0	_aTK7871.85 _b.R466
082	0	0	_a621.381/71
100	1		_aRichman, Paul, _d1942-
245	1	0	_aMOS field-effect transistors and integrated circuits.
260			_aNew York, _bWiley _c[1973]
300			_aix, 259 p. _billus. _c23 cm.
500			_a"A Wiley-Interscience publication."
504			_aIncludes bibliographies.
650		0	_aMetal oxide semiconductors.
650		0	_aField-effect transistors.
650		0	_aIntegrated circuits.
906			_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg
942			_2udc _cBK
999			_c18789 _d18789